发明名称 |
Compound semiconductor epitaxial substrate and method for manufacturing same |
摘要 |
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on the front side of the above described InGaAs layer as the strained channel layer.
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申请公布号 |
US2006192228(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20050545295 |
申请日期 |
2005.08.11 |
申请人 |
NAKANO TSUYOSHI;HATA MASAHIKO |
发明人 |
NAKANO TSUYOSHI;HATA MASAHIKO |
分类号 |
H01L29/201;H01L31/00;H01L21/205;H01L21/338;H01L29/205;H01L29/778;H01L29/812 |
主分类号 |
H01L29/201 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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