| 摘要 |
<p>The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings for crucibles used in the solidification of polycrystalline silicon. The objective of the inventor was to provide a crucible which does not require the preparation of a very thick coating at the end user facilities, which is faster and cheaper to produce and which presents an improved release effect and which allows the production of silicon ingot without cracks. It has now been found that these problems can be solved with a crucible for the crystallization of silicon comprising a) a base body comprising a bottom surface and side walls defining an inner volume; b) a substrate layer compnsing 80 to 100 wt. % of silicon nitride at the surface of the side walls facing the inner volume
c) an intermediate layer comprising 50 to 100 wt. % of silica on the top of the substrate layer; and d) a surface layer comprising 50 to 100 wt. % of silicon nitride, up to 50 wt. % of silicon dioxide and up to 20 wt % of silicon on the top of the intermediate layer.</p> |
