发明名称 |
SILICON OXYNITRIDE GATE DIELECTRIC FORMATION USING MULTIPLE ANNEALING STEPS |
摘要 |
A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pressure of about 1 to about 100 mTorr, and the second anneal step includes annealing the silicon oxynitride film with oxygen gas that has a flow rate of about 1 slm. The first anneal step is performed at a higher chamber temperature and higher chamber pressure than the second anneal step. |
申请公布号 |
WO2007118031(A3) |
申请公布日期 |
2007.12.13 |
申请号 |
WO2007US65650 |
申请日期 |
2007.03.30 |
申请人 |
APPLIED MATERIALS, INC.;OLSEN, CHRISTOPHER, S. |
发明人 |
OLSEN, CHRISTOPHER, S. |
分类号 |
H01L21/31;H01L21/28;H01L21/314;H01L21/324;H01L29/51 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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