发明名称 Cap wafer having electrodes
摘要 <p>A cap wafer, fabrication method, and a semiconductor chip arc provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.</p>
申请公布号 EP1900680(A2) 申请公布日期 2008.03.19
申请号 EP20070115664 申请日期 2007.09.04
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LIM, JI-HYUK;HWANG, JUN-SIK;KIM, WOON-BAE
分类号 B81B7/00 主分类号 B81B7/00
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