CONTACT STRUCTURE FILLED NANO MATERIALS AND METHODS OF FORMING THE SAME

摘要

A contact structure and a method of forming the same are provided to increase the density of a nano tube within a contact hole, and to enable formation of the nano tube although diameter of the contact hole decreases by entirely filling nano materials within the contact hole, thereby preventing contact defects of a highly integrated device. A method for forming a contact structure comprises the steps of: forming a lower electrode(10) on a substrate(1); forming an interlayer insulation film(15) having a contact hole(25) on the substrate having the lower electrode; successively forming a barrier layer and a catalyst layer on the substrate having the contact hole; forming a photoresist film filling the contact hole on the substrate which has the barrier layer and the catalyst layer; etching back the photoresist film to expose the catalyst layer formed on the interlayer insulation film, as remaining the photoresist film within the contact hole; etching back the catalyst layer and the barrier layer by using etching gas containing chlorine gas, to form a barrier layer pattern(27') and a catalyst layer pattern(30') remaining within the contact hole; removing the residual photoresist film in the contact hole through an ashing process; and forming nano materials filling inside the contact hole by using the catalyst layer pattern as a seed layer.