发明名称 |
High dielectric capacitor materials and method of their production |
摘要 |
Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu<SUB>3</SUB>Ti<SUB>4</SUB>O<SUB>12 </SUB>or La<SUB>3</SUB>Ga<SUB>5</SUB>SiO<SUB>4</SUB>. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
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申请公布号 |
US2008218940(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070713783 |
申请日期 |
2007.03.05 |
申请人 |
NORTHROP GRUMMAN SYSTEMS CORPORATION |
发明人 |
SINGH NARSINGH B.;TALVACCHIO JOHN J.;SHERWIN MARC;BERGHMANS ANDRE;KNUTESON DAVID J.;KAHLER DAVID;WAGNER BRIAN;ADAM JOHN D. |
分类号 |
H01G5/013;C01F11/02;C01F17/00;C01G3/02;C01G23/00;H01G5/011 |
主分类号 |
H01G5/013 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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