PATTERN FORMING METHOD AND MANUFACTURING METHOD FOR GRAY TONE MASK

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method in which a drawing pattern of a first time and a drawing pattern of a second time are disposed with high precision when overlay drawing is performed to form patterns on the same substrate by using a plurality of patterning stages using a photolithography method.

SOLUTION: The pattern forming method includes the stages of: preparing a substrate where a layer to be etched is formed for forming a first pattern and a second pattern including a first alignment mark; forming a resist film on the substrate, and then drawing a second alignment mark on the resist film after positioning using the first alignment mark; measuring position precision of overlay drawing by using the first pattern and the second alignment mark obtained by the drawing; and correcting a position shift found as a result of the measurement of the position precision of the overlay drawing in such a case then drawing the second pattern on the resist film.

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