METHOD OF PRODUCING A STRUCTURE BY LAYER TRANSFER

摘要

This invention relates to a method of producting a semiconductor structure by transferring a layer (32) of a donor substrate (30) to a receiver substrate (10), comprising the following stages : (a) creation of an embrittlement zone (31) in the donor substrate (30) so as to define the aforementioned layer (32), (b) treatment of the surface of the donor substrate (30) and/or the receiver substrate (10), so as to increase the bonding strength between the two substrates (c) direct wafer bonding of the donor substrate (30) to the receiver substrate (10), (d) detachment of the donor substrate (30) in the embrittlement zone (31), so as to form said semiconductor structure, in which the surface of the receiver substrate, except for a peripheral crown, is covered with the transferred layer (32). This method is notable in that at stage (b) treatment of the substrate surface is controlled, so that the increase in bonding strength between the donor substrate and the receiver substrate is lower in a peripheral area of these substrates than the increase in bonding strength in the central area of said substrates and in that said peripheral area has a width at least equal to the that of the crown and lower than 10 mm.