SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.

主权项

1. A semiconductor device, comprising:
a memory element comprises: an electrode having a top portion and a bottom portion; and a data storage pattern covering the top portion of the electrode entirely and a side portion of the electrode partially, wherein the data storage pattern comprising magnetic fixed layer, tunnel barrier, and magnetic free layer.