| 发明名称 |
STACKED METAL LAYERS WITH DIFFERENT THICKNESSES |
| 摘要 |
A semiconductor chip includes a plurality of stacked conductive layers. The plurality of stacked conductive layers includes a first conductive layer, a second conductive layer, and a third conductive layer. The first conductive layer is disposed on a first side of the second conductive layer. The third conductive layer is disposed on a second side of the second conductive layer. The third conductive layer is disposed on a side of the second conductive layer. The second conductive layer has a thickness which is thicker than those of the first conductive layer and the third conductive layer. |
| 申请公布号 |
US2016181257(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514969730 |
申请日期 |
2015.12.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
LIAW JHON JHY |
| 分类号 |
H01L27/11;H01L29/78;H01L23/528 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor chip, comprising:
a plurality of stacked conductive layers, wherein
the plurality of stacked conductive layers comprise:
a first conductive layer;a second conductive layer, wherein the first conductive layer is disposed on a first side of the second conductive layer; anda third conductive layer, wherein the third conductive layer is disposed on a second side of the second conductive layer; andthe second conductive layer has a thickness which is thicker than those of the first conductive layer and the third conductive layer. |
| 地址 |
HSINCHU TW |
