发明名称 DISCONTINUOUS AIR GAP CRACK STOP
摘要 An method including forming multiple interconnect levels on top of one another, each level comprising a metal interconnect and a crack stop both embedded in a dielectric layer, and a dielectric capping layer directly on top of the dielectric layer and directly on top of the metal interconnect, the crack stop is an air gap which intersects an interface between the dielectric layer and the dielectric capping layer of each interconnect level, and forming a through substrate via through the multiple interconnect levels adjacent to, but not in direct contact with, the crack stop, the crack stop of each interconnect level is directly between the metal interconnect of each interconnect level and the through substrate via to prevent cracks caused during fabrication from propagating away from the through substrate via and damaging the metal interconnect.
申请公布号 US2016181208(A1) 申请公布日期 2016.06.23
申请号 US201414574430 申请日期 2014.12.18
申请人 GLOBALFOUNDRIES INC. 发明人 Bao Junjing;Bonilla Griselda;Choi Samuel S.;Filippi Ronald G.;Liu Xiao H.;Lustig Naftali E.;Simon Andrew H.
分类号 H01L23/00;H01L23/48;H01L21/768 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method comprising: forming multiple interconnect levels on top of one another, each interconnect level comprising a metal interconnect embedded in a dielectric layer, an air gap partially embedded in the dielectric layer, and a dielectric capping layer directly on top of the dielectric layer and directly on top of the metal interconnect, the air gap intersects an interface between the dielectric layer and the dielectric capping layer of each interconnect level, and air gaps in adjacent interconnect levels do not physically contact one another; and forming a through substrate via through the multiple interconnect levels adjacent to, but not in direct contact with, the air gap, the air gap of each interconnect level is directly between the metal interconnect of each interconnect level and the through substrate via to prevent cracks caused during fabrication from propagating away from the through substrate via and damaging the metal interconnect.
地址 Grand Cayman KY