SUBTRACTIVE ETCH INTERCONNECTS

摘要

A method of forming an integrated metal line and interconnect. The method may include forming a first trench in a first ILD exposing a lower metal line, the first ILD is above a substrate, and the lower metal line is in the substrate; forming a first barrier layer in the first trench; forming an integrated metal layer (including a first metal line and a first via) on the first barrier layer; forming a first hardmask on the integrated metal layer; forming an isolation trench in the first hardmask and in the first metal line; forming a second barrier layer in the isolation trench; removing a portion of the second barrier layer from a bottom of the isolation trench exposing the first ILD; and forming a second ILD on the second barrier and in the isolation trench, where a bottom of the second ILD is in the first ILD.

主权项

1. A method comprising:
forming a first trench in a first inter-layer dielectric (ILD) and a first cap, wherein the first cap is on a substrate and the first ILD is on the first cap, wherein the first trench exposes a lower metal line, and wherein the lower metal line is in the substrate; forming a first barrier layer on the first ILD and in the first trench; forming an integrated metal layer on the first barrier layer, wherein the integrated metal layer includes a first metal line and a first via, wherein the first metal line is above the first ILD and the first via is in the first trench, wherein the first metal line is in direct contact with the first via, and wherein a top surface of the integrated metal layer is planar; forming a first hardmask on the integrated metal layer; forming an isolation trench in the first hardmask and in the first metal line, wherein the isolation trench is not directly above the first via; forming a second barrier layer in the isolation trench; removing a portion of the second barrier layer from a bottom of the isolation trench exposing the first ILD; forming a second ILD on the second barrier and in the isolation trench, wherein a bottom of the second ILD is on the first ILD and below a top surface of the first ILD; and removing the second ILD and the second barrier layer from above the integrated metal layer.