FIN FORMATION ON AN INSULATING LAYER

摘要

An approach to forming fins for a semiconductor device on a silicon-on-insulator wafer. The approach includes depositing a layer of mandrel material and etching the layer of mandrel material to form a mandrel. The approach includes depositing a layer of a dielectric material on the semiconductor layer and around the mandrel and etching the layer of the dielectric material to form one or more spacers next to the sidewalls of the mandrel, followed by removing the mandrel. Additionally, the approach includes depositing a layer of amorphous semiconductor material around said one or more spacers and heating it to transform into a layer of re-crystallized semiconductor material through solid phase epitaxy. Furthermore, the approach includes removing portions of the layer of re-crystallized semiconductor material from each of the horizontal surfaces of the silicon-on-insulator wafer including the area where the one or more spacers were removed to form one or more fins.

主权项

1. A method of forming fins for a semiconductor device on a silicon-on-insulator (SOI) wafer, the method comprising:
depositing a layer of mandrel material on a semiconductor layer of the SOI wafer; etching the layer of mandrel material to form a mandrel; depositing a layer of dielectric material on the semiconductor layer and around the mandrel etching the layer of dielectric material to form one or more spacers next to sidewalls of the mandrel; removing the mandrel; depositing a layer of amorphous semiconductor material around said one or more spacers; heating and causing the layer of amorphous semiconductor material to transform into a layer of re-crystallized semiconductor material through solid phase epitaxy; removing portions of the layer of re-crystallized semiconductor material from top surfaces of the one or more spacers; removing the one or more spacers, and removing the semiconductor layer on the SOI wafer from an area where the one or more spacers were removed to form one or more fins of the re-crystallized semiconductor material.