| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
To provide a semiconductor device suitable for high reliability and high-speed operation. The semiconductor device includes a first conductor, a first insulator, a second insulator, a semiconductor, and an electron trap layer. The semiconductor includes a channel formation region. The first conductor includes a region overlapping with the channel formation region with the first insulator provided therebetween. The second insulator is placed to include a region in contact with a side surface of the first conductor. The electron trap layer is placed to face the first conductor with the second insulator provided therebetween. |
| 申请公布号 |
US2016190338(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514976474 |
申请日期 |
2015.12.21 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
TANAKA Tetsuhiro;MATSUBAYASHI Daisuke;TANEMURA Kazuki |
| 分类号 |
H01L29/786;H01L21/479;H01L27/12 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first conductor; a first insulator; a semiconductor including a channel formation region, the channel formation region overlapping with the first conductor with the first insulator provided therebetween; a second insulator in contact with a side surface of the first conductor; and an electron trap layer facing the first conductor with the second insulator provided therebetween. |
| 地址 |
Atsugi-shi JP |
