| 发明名称 |
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE |
| 摘要 |
A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second. |
| 申请公布号 |
US2016190265(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201615061912 |
申请日期 |
2016.03.04 |
| 申请人 |
Alpha and Omega Semiconductor Incorporated |
发明人 |
Lee Yeeheng;Guan Lingpeng;Xue Hongyong;Gu Yiming;Xiang Yang;Huang Terence;Ramamoorthy Sekar;Li Wenjun;Chang Hong;Bobde Madhur;Thorup Paul;Yilmaz Hamza |
| 分类号 |
H01L29/423;H01L29/66;H01L29/78;H01L27/088;H01L29/40 |
主分类号 |
H01L29/423 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a plurality of gate trenches formed into a semiconductor substrate in an active cell region, each gate trench having a first conductive material in lower portions of the gate trench and a second conductive material in upper portions of the gate trench, wherein the first conductive material in the gate trench is separated from the semiconductor substrate by a first insulating layer, and wherein the second conductive material in the gate trench is separated from the semiconductor substrate by a second insulating layer and separated from the first conductive material in the gate trench by a third insulating layer; and one or more other trenches formed into the semiconductor substrate in a region other than the active cell region, wherein the one or more other trenches contain at least part of the first conductive material in a half U shape in lower portions of the one or more trenches and part of the second conductive material in upper portions of the one or more other trenches, and wherein the first conductive material and the second conductive material in the one or more other trenches are separated by the third insulating layer. |
| 地址 |
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