| 发明名称 |
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION METHOD AND DEVICE |
| 摘要 |
A method of forming a source/drain region with an abrupt, vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a gate electrode over and perpendicular to a semiconductor fin; forming first spacers on opposite sides of the gate electrode; forming second spacers on opposite sides of the fin; forming a cavity in the fin adjacent the first spacers, between the second spacers; partially epitaxially growing source/drain regions in each cavity; implanting a first dopant into the partially grown source/drain regions with an optional RTA thereafter; epitaxially growing a remainder of the source/drain regions in the cavities, in situ doped with a second dopant; and implanting a third dopant in the source/drain regions. |
| 申请公布号 |
US2016190251(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514676912 |
申请日期 |
2015.04.02 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
FENG Peijie;PENG Jianwei;LIU Yanxiang;PANDEY Shesh Mani;BENISTANT Francis |
| 分类号 |
H01L29/08;H01L29/78;H01L29/161;H01L21/8234;H01L29/24;H01L21/265;H01L21/324;H01L29/66;H01L29/167 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a gate electrode over and perpendicular to a semiconductor fin; forming first spacers on opposite sides of the gate electrode; forming second spacers on opposite sides of the fin; forming a cavity in the fin adjacent the first spacers, between the second spacers; partially epitaxially growing source/drain regions in each cavity; implanting a first dopant into the partially grown source/drain regions; epitaxially growing a remainder of the source/drain regions in the cavities, in situ doped with a second dopant; and implanting a third dopant in the source/drain regions. |
| 地址 |
Grand Cayman KY |
