| 发明名称 |
Semiconductor Device Including an Isolation Structure and Method of Manufacturing a Semiconductor Device |
| 摘要 |
An embodiment of a semiconductor device comprises a first load terminal contact area at a first side of a semiconductor body. A second load terminal contact area is at a second side of the semiconductor body opposite to the first side. A control terminal contact area is at the second side of the semiconductor body. An isolation structure extends through the semiconductor body between the first and second sides. The isolation structure electrically isolates a first part of the semiconductor body from a second part of the semiconductor body. A first thickness of the first part of the semiconductor body is smaller than a second thickness of the second part of the semiconductor body. |
| 申请公布号 |
US2016190241(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514977393 |
申请日期 |
2015.12.21 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Kadow Christoph;Schloesser Till |
| 分类号 |
H01L29/06;H01L29/423;H01L21/78;H01L21/762;H01L21/308;H01L29/45;H01L29/10 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first load terminal contact area at a first side of a semiconductor body; a second load terminal contact area at a second side of the semiconductor body opposite to the first side; a control terminal contact area at the second side of the semiconductor body; an isolation structure extending through the semiconductor body between the first and second sides, the isolation structure electrically isolating a first part of the semiconductor body from a second part of the semiconductor body, and wherein a first thickness of the first part of the semiconductor body is smaller than a second thickness of the second part of the semiconductor body. |
| 地址 |
Neubiberg DE |
