ACOUSTIC WAVE DEVICE STRUCTURE, INTEGRATED STRUCTURE OF POWER AMPLIFIER AND ACOUSTIC WAVE DEVICE, AND FABRICATION METHODS THEREOF

摘要

An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate, a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate; wherein forming an epitaxial structure on a compound semiconductor substrate to form said compound semiconductor epitaxial substrate; wherein said first side of said compound semiconductor epitaxial substrate and said power amplifier upper structure form a power amplifier; said second side of said compound semiconductor epitaxial substrate and said film bulk acoustic resonator form an acoustic wave device; the integrated structure of power amplifier and acoustic wave device on the same compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between power amplifier and acoustic wave device.

主权项

1. An integrated structure of power amplifier and acoustic wave device, comprising:
a compound semiconductor epitaxial substrate including a compound semiconductor substrate and an epitaxial structure formed on said compound semiconductor substrate; a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, wherein said first side of said compound semiconductor epitaxial substrate and said power amplifier upper structure form a power amplifier; and a film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate, wherein said second side of said compound semiconductor epitaxial substrate and said film bulk acoustic resonator form an acoustic wave device; wherein, the integrated structure of said power amplifier and said acoustic wave device on the same said compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between said power amplifier and said acoustic wave device.