DEVICE WITHOUT ZERO MARK LAYER

摘要

Devices and methods for forming a device are disclosed. The method includes providing a substrate having first and second surfaces. At least one through silicon via (TSV) opening is formed in the substrate. The TSV opening extends through the first and second surfaces of the substrate. An alignment trench corresponding to an alignment mark is formed in the substrate. The alignment trench extends from the first surface of the substrate to a depth shallower than a depth of the TSV opening. A dielectric liner layer is provided over the substrate. The dielectric liner layer at least lines sidewalls of the TSV opening. A conductive layer is provided over the substrate. The conductive layer fills at least the TSV opening to form TSV contact. A redistribution layer (RDL) is formed over the substrate. The RDL layer is patterned using a reticle to form at least one opening which corresponds to a TSV contact pad. The reticle is aligned using the alignment mark in the substrate.

主权项

1. A device comprising:
a substrate having first and second surfaces, wherein the substrate is defined with a device region and a frame region surrounding the device region; at least one through silicon via (TSV) opening disposed in the substrate, wherein the TSV opening extends through the first and second surfaces of the substrate and is filled with a conductive material to form TSV contact; an alignment trench disposed in the substrate, wherein the alignment trench extends from the first surface of the substrate into the substrate to a depth shallower than a depth of the TSV contact; a dielectric liner layer disposed over the substrate, wherein the dielectric liner layer is a continuous layer which at least lines a sidewall of the TSV opening, extends over the first surface of the substrate and lines sidewalls of the alignment trench, wherein a top surface of the TSV contact is about coplanar with a top surface of the portion of the continuous dielectric liner layer which extends over the first surface of the substrate; and a redistribution layer (RDL) disposed over the substrate, wherein the RDL comprises TSV contact pad coupled to the TSV contact.