发明名称 |
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a-group III-nitride-film-side main surface of the group III nitride composite substrate is 200 Ω/sq or less. A method for manufacturing a group III nitride composite substrate includes the steps of bonding the group III nitride film and the support substrate to each other; and reducing the thickness of at least one of the group III nitride film and the support substrate bonded to each other. Accordingly, a group III nitride composite substrate of a low sheet resistance that is obtained with a high yield as well as a method for manufacturing the same are provided. |
申请公布号 |
US2016190001(A1) |
申请公布日期 |
2016.06.30 |
申请号 |
US201615061337 |
申请日期 |
2016.03.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HACHIGO Akihiro;ISHIBASHI Keiji;MATSUMOTO Naoki |
分类号 |
H01L21/762;H01L29/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Osaka JP |