ETCH BIAS CONTROL

摘要

A semiconductor device and method for forming a semiconductor device are presented. The method includes providing a patterned reticle having a pattern perimeter defined by active and dummy patterns. The dummy patterns include dummy structures modified according to a density equation. The patterned reticle is used to pattern a resist layer on a substrate with a device layer. An etch is performed to pattern the device layer using the patterned resist layer. Additional processing is performed to complete formation of the device.

主权项

1. A method for forming a device comprising:
providing a patterned reticle comprising a reticle perimeter which includes a target reticle perimeter defined by total length of circumference of active and dummy patterns, the dummy patterns comprise modified dummy structures, wherein a modified dummy structure includes one or more slots or voids therein and the one or more slots or voids are tailored to achieve the target reticle perimeter to produce a desired etch bias; forming a resist layer on a substrate with a device layer; exposing and developing the resist layer using the reticle to form a patterned resist layer containing active and dummy patterns of the reticle; performing an etch to pattern the device layer using the patterned resist layer, wherein the patterned device layer includes active and dummy patterns of the reticle; and performing additional processing to complete forming the device.