COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD OF FORMING THE SAME

摘要

The present invention relates to a CMOS image sensor device and a method of forming the same. The CMOS image sensor device includes a substrate, a deep trench isolation (DTI), a photodiode, an electrode and an interface region. The DTI and the photodiode are both disposed in the substrate. The electrode is disposed on the DTI. The interface region is formed adjacent to the DTI.

主权项

1. A complementary metal oxide semiconductor (CMOS) image sensor device, comprising:
a substrate; a deep trench isolation (DTI) disposed in the substrate; a photodiode disposed in the substrate; an electrode disposed on the DTI; an interface region adjacent to the DTI; and a doped region disposed between the DTI and the photodiode in the interface region, wherein the doped region has a different conductive type from that of the photodiode.