发明名称 |
SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS |
摘要 |
Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfilling the etch mask. At least a top portion of the mask is removed with the substrate features protected by the sacrificial material. The sacrificial material and any remaining portion of the mask are then removed. In further embodiments, a gate contact opening etched into a substrate layer is protected with a sacrificial material having the same composition as a first material layer of a multi-layered etch mask. A second material layer of the etch mask having a similar composition as the substrate layer is removed before subsequently removing the sacrificial material concurrently with the first mask material layer. |
申请公布号 |
US2016203999(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201314914627 |
申请日期 |
2013.09.25 |
申请人 |
INTEL CORPORATION |
发明人 |
SUNDARARAJAN SHAKUNTALA;RAHHAL-ORABI NADIA;GULER LEONARD P;HARPER MICHAEL;TROEGER RALPH THOMAS |
分类号 |
H01L21/311;H01L21/02;H01L21/8234;H01L29/06;H01L27/088;H01L21/033;H01L21/3105;H01L29/40 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Santa Clara CA US |