| 发明名称 | Semiconductor memory device and method of operating the same | ||
| 摘要 | A semiconductor memory device and a method of operating the same are provided. The method of operating the semiconductor memory device includes detecting a first group of changed bits between first and second page data, by comparing the first and second page data, which are read out using first and second test voltages from the memory cells, respectively, detecting a second group of changed bits between the second page data and a third page data, by comparing the second page data with the third page data read out from the memory cells using a third test voltage, comparing the numbers of the first and second groups of changed bits, and determining one of the first to third test voltages as a read voltage according to the comparing of the numbers of the first and second groups of changed bits. | ||
| 申请公布号 | US9406402(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201414292299 | 申请日期 | 2014.05.30 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Tae Hoon |
| 分类号 | G11C29/50;G11C16/34;G11C11/56;G11C16/26 | 主分类号 | G11C29/50 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method of operating a semiconductor memory device including memory cells, comprising: detecting a first group of changed bits between first and second page data, by comparing the first and second page data, which are read out using first and second test voltages from the memory cells, respectively; detecting a second group of changed bits between the second page data and a third page data, by comparing the second page data with the third page data read out from the memory cells using a third test voltage; comparing the numbers of the first and second groups of changed bits; and determining one of the first to third test voltages as a read voltage according to the comparing of the numbers of the first and second groups of changed bits. | ||
| 地址 | Gyeonggi-do KR | ||