发明名称 Phase change memory with mask receiver
摘要 Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic.
申请公布号 US9406378(B2) 申请公布日期 2016.08.02
申请号 US201414560410 申请日期 2014.12.04
申请人 Intel Corporation 发明人 Chu Daniel J.
分类号 G11C11/00;G11C13/00;G11C7/10 主分类号 G11C11/00
代理机构 Thorpe North & Western, LLP 代理人 Thorpe North & Western, LLP
主权项 1. A phase change memory, comprising: an array of phase change memory cells; and a mask receiver for individual cells in the array to receive a mask, identify existing data, identify input data and determine whether to inhibit a reset pulse.
地址 Santa Clara CA US