发明名称 WAVEGUIDE COUPLER
摘要 An apparatus is provided. In the apparatus, there is an antenna package and an integrated circuit (IC). A circuit trace assembly is secured to the IC. A coupler (with an antenna assembly and a high impedance surface (HIS)) is secured to the circuit trace assembly. An antenna assembly has a window region, a conductive region that substantially surrounds the window region, a circular patch antenna that is in communication with the IC, and an elliptical patch antenna that is located within the window region, that is extends over at least a portion of the circular patch antenna, and that is in communication with the circular patch antenna. The HIS substantially surrounds the antenna assembly.
申请公布号 US2016276731(A1) 申请公布日期 2016.09.22
申请号 US201615167768 申请日期 2016.05.27
申请人 Texas Instruments Incorporated 发明人 Seok Eunyoung;Ramaswamy Srinath;Ginsburg Brian B.;Rentala Vijay B.;Haroun Baher
分类号 H01P11/00;H05K3/20;H05K3/46;H05K3/40;H01Q9/04;H01P5/08 主分类号 H01P11/00
代理机构 代理人
主权项 1. A method comprising: forming a first metallization layer over the substrate such that the first metallization layer includes first and second circular patch antennas that are symmetrically aligned with one another; forming a second metallization layer over the first metallization layer, wherein the second metallization layer has first, second, and third portions, and wherein the first and second portions of the second metallization layer are in communication with the first and second patch antennas, respectively; forming a third metallization layer over the second metallization layer, wherein the third metallization layer has first, second, and third portions, and wherein the first, second, and third portions of the third metallization layer are in communication with the first, second, and third portions of the second metallization layer, respectively; and forming a fourth metallization layer over the third metallization layer, wherein the fourth metallization layer has first, second, and third portions, and wherein the first, second, and third portions of the fourth metallization layer are in communication with the first, second, and third portions of the third metallization layer, respectively, and wherein the first and second portions of the fourth metallization layer are located within a opening in the third portion of the fourth metallization layer that defines a window region, and wherein the first and second portions of the fourth metallization layer formed first and second elliptical patch antennas that are symmetrically aligned with one another.
地址 Dallas TX US