Compound-barrier infrared photodetector

摘要

Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.

主权项

1. A compound barrier infrared photodetector comprising:
a photo absorber layer responsive to infrared light; a first barrier layer disposed on the absorber layer; a second barrier layer disposed on the first barrier layer; a contact layer disposed on the second barrier layer; wherein the first barrier layer substantially comprises AlAszSb1-z, z is between 0 and 0.15; and the second barrier layer substantially comprises AlyIn1-yAsxSb1-x, y is between 0 and 1, x is between 0.05 and 0.30.