Uniform depth fin trench formation

摘要

Methods for forming substantially uniform depth trenches and/or semiconductor fins from the trenches are disclosed. Embodiments of the method may include depositing a germanium including layer over a substrate, the substrate including a plurality of sacrificial semiconductor fins, each pair of sacrificial semiconductor fins separated by a sacrificial pillar. Germanium is diffused from the germanium including layer into the plurality of sacrificial semiconductor fins to a defined uniform depth. The germanium including layer is removed, and the plurality of sacrificial semiconductor fins are etched to the defined uniform depth and selective to the substrate, creating a plurality of trenches having a substantially uniform depth. The trenches can be used to epitaxial grow semiconductor fins having substantially uniform height.

主权项

1. A method, comprising:
depositing a germanium including layer over a substrate, the substrate including a plurality of sacrificial semiconductor fins, each pair of sacrificial semiconductor fins separated by a sacrificial pillar; diffusing germanium from the germanium including layer into the plurality of sacrificial semiconductor fins to a defined uniform depth; and etching the plurality of sacrificial semiconductor fins including the diffused germanium to the defined uniform depth and selective to the substrate, creating a plurality of trenches having a substantially uniform depth.