METHOD OF FORMING FINE PATTERNS

摘要

Provided is a method of forming fine patterns, which is capable of easily forming a plurality of patterns repeatedly with a fine pitch when forming patterns necessary for manufacturing a highly integrated semiconductor device exceeding a resolution limit of a photolithography process.

主权项

1. A method of forming tine patterns, the method comprising:
forming a feature layer on a substrate, the substrate having a first region and a second region; forming a plurality of first pillar-shaped guides and a plurality of second pillar-shaped guides, the plurality of second pillar-shaped guides having a diameter greater than a diameter of the plurality of first pillar-shaped guides, the plurality of first pillar-shaped guides being regularly arranged on the feature layer of the first region of the substrate, and the plurality of second pillar-shaped guides being arranged on the feature layer at a boundary between the first region and the second region; forming a liner on surfaces of the feature layer, the plurality of first pillar-shaped guides, and the plurality of second pillar-shaped guides; forming a block copolymer layer on the liner such that the block copolymer is formed around each of the plurality of first pillar-shaped guides and the plurality of second pillar-shaped guides; forming a plurality of first domains and a second domain by phase-separating the block copolymer layer, the plurality of first domains being regularly arranged together with the plurality of first pillar-shaped guides, and the second domain surrounding each of the plurality of first domains; removing the plurality of first domains; and forming a plurality of holes in the feature layer by etching the feature layer using the second domain as an etch mask.