发明名称 半導体装置
摘要 A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.
申请公布号 JP6030182(B2) 申请公布日期 2016.11.24
申请号 JP20150079667 申请日期 2015.04.09
申请人 株式会社半導体エネルギー研究所 发明人 荒井 康行
分类号 H01L21/336;G02F1/1368;G09F9/30;H01L21/28;H01L21/3205;H01L21/477;H01L21/768;H01L29/417;H01L29/786;H01L51/50;H05B33/14 主分类号 H01L21/336
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