发明名称 Redn. of masking errors in semiconductor mfr. - using a control system based on prodn. of high-contrast adjustment marks
摘要 A process for reducing masking errors due to the equipment in a projection, adjustment and exposure unit for the exposure of substrates operating on the on-axis masking principle. An arrangement of x, y and phi basal adjustment marks which form basic adjustment marks, is produced on a test substrate using semiconductor technology, the substrate is processed using semiconductor and image-forming processes, the basic adjustment marks are then covered successively with the masking system of the exposure unit, and the coordinates of the actuator in the aligned state of controlled masking are determined by means of a position measuring device. The values determined are stored in the memory of a computer, and the relative distances are subsequently determined from these stored values and are themselves stored. The calibration values derived therefore are determined, for detuning the x, y and phi channels of the masking system. The calibration values form control signals for an actuator which can be positioned with great accuracy. The actuator is pref. a laser path system coupled to the substrate platform, and is calibrated. USE/ADVANTAGE - The invention is used in the mfr. of high density integrated circuit components. The error reduction claimed can be achieved at low intrinsic cost and with low materials expenditure.
申请公布号 DE4108578(A1) 申请公布日期 1992.09.17
申请号 DE19914108578 申请日期 1991.03.14
申请人 MIKROELEKTRONIK UND TECHNOLOGIE GMBH, O-8080 DRESDEN, DE 发明人 PFORR, RAINER, DR., O-8038 DRESDEN, DE;SELTMANN, ROLF, O-8010 DRESDEN, DE;STAMM, GUNTHER, O-6902 JENA, DE;WIECKENBERG, MATHIAS, O-6904 DORNBURG, DE
分类号 G03F9/00 主分类号 G03F9/00
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