发明名称 Magnetic multilayer film and magnetoresistance element
摘要 A magnetic multilayer film having magnetoresistance (MR) is prepared by depositing at least two magnetic thin films having different coercive forces while interposing a non-magnetic thin film therebetween. A first magnetic thin film having a lower coercive force has a squareness ratio SQ1 and a thickness t1, a second magnetic thin film having a higher coercive force has a squareness ratio SQ2 and a thickness t2, and the non-magnetic thin film has a thickness t3. A first form of the invention requires 4 ANGSTROM </=t2<30 ANGSTROM , 20 ANGSTROM <t1</=200 ANGSTROM , t1>t2, t3</=200 ANGSTROM , 0.7</=SQ1</=1.0, and 0.1</=SQ2</=0.8, thereby achieving a magnetic multilayer film which shows a great MR ratio of several percents under an external magnetic field of several Oe, an excellent rise across zero magnetic field and heat resistance. A second form of the invention requires 4 ANGSTROM <t2<20 ANGSTROM , 5 ANGSTROM <t1</=20 ANGSTROM , t1<t2 and 32 ANGSTROM <t3<50 ANGSTROM , thereby achieving a magnetic multilayer film which is increased in MR ratio, MR slope between -50 Oe and +50 Oe, and high-frequency MR slope while showing minimized hysteresis. There are obtained MR elements, typically high sensitivity MR sensors and MR heads capable of high density magnetic recording.
申请公布号 US5510172(A) 申请公布日期 1996.04.23
申请号 US19930079940 申请日期 1993.06.23
申请人 TDK CORPORATION 发明人 ARAKI, SATORU;MIYAUCHI, DAISUKE
分类号 H01L21/203;G01R33/09;G11B5/39;H01F10/32;H01F41/30;H01L43/08;H01L43/10;(IPC1-7):B32B7/02;G11B5/66;G11B5/70;G11B5/127 主分类号 H01L21/203
代理机构 代理人
主权项
地址