发明名称 |
Lateral bipolar junction transistor in CMOS flow |
摘要 |
An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes patterning and n-well implants; pattern and implant pocket implants for core nMOS and MOS; pattern and implants pocket implants I/O nMOS and pMOS; sidewall deposit and etch and then source/drain pattern and implant for nMOS and pMOS. The bipolar transistor is formed by forming emitter and collector contacts by implants used in source/drain regions; forming an emitter by implants done in core pMOS during core pMOS LDD extender; and forming part of an base by pocket implant steps.
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申请公布号 |
US7285830(B2) |
申请公布日期 |
2007.10.23 |
申请号 |
US20050239794 |
申请日期 |
2005.09.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHATTERJEE AMITAVA |
分类号 |
H01L29/76;H01L21/331;H01L21/8222;H01L21/8249;H01L27/07;H01L29/735 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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