发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To form patterns having high resolving power and depth of focus. SOLUTION: A mixture composed of >=2 kinds of base polymers having acid unstable groups varying from each other or a base polymer having >=2 kinds of the acid unstable groups varying from each other in the one molecule is used as the base polymer at the time of forming positive type patterns by applying a chemical amplification positive type resist material on a substrate to a uniform thickness to form a resist film, exposing this resist film and subjecting the film to post exposure baking, then developing the resist film with a developer. Further, the exposure E1 at which the average of the dissolution rate from the surface of the resist film to 500Åin a substrate direction attains 100Å/sec and the exposure E2 at which the average of the dissolution rate from the surface of the substrate to 1000Åin the resist film surface direction attains 100Å/sec are so adjusted as to attain -0.2<(E2-E1)/E2<0.2 by adjusting the kinds of the acid unstable groups varying from each other and the content thereof in the base polymer.
申请公布号 JPH10326017(A) 申请公布日期 1998.12.08
申请号 JP19980091041 申请日期 1998.03.19
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;NAGURA SHIGEHIRO
分类号 G03F7/004;G03F7/039;G03F7/38;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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