THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR

摘要

A thin film transistor, a manufacturing method thereof, and a flat panel display having the same are provided to reduce a manufacturing cost by forming an LDD(Lightly Doped Diffusion) region and source and drain regions without using extra mask and photolithography. A semiconductor layer(13) is formed on a substrate(11). A gate electrode(15a) is isolated from the semiconductor layer by a gate insulating layer(14), and openings are formed on both sides of the gate electrode. A first impurity region is formed in the semiconductor layer, and is exposed by the openings. A second impurity region is formed on both sides of the gate electrode, in which an impurity concentration of the second impurity region is higher than that of the second impurity region. A buffer layer(12) is formed between the substrate and the semiconductor layer.