| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of being manufactured in a standard C-MOS LSI manufacturing process and enhancing a ratio of opening areas. SOLUTION: One pixel is constituted by providing N type diffused layers 14a-14d, a P type diffused layer 15, insulating layers 16a, 16b, insulating films 17a, 17b, polysilicons 18a, 18b and a shielding film 19 on a P type silicon layer 13 of an SOI substrate 10 having an insulating layer 12. Then, when light is incident to the N type diffused layer 14b to be a photosensing part, a charge in response to its incident light amount is stored in the layer 13, and a potential of the layer 13 is changed. An output current in response to the potential of the layer 13 is output to an output signal line connected to the layer 14a.
|
