发明名称 |
Integrated circuit having at least two vertical MOS transistors and method for manufacturing same |
摘要 |
An integrated circuit having at least two vertical MOS transistors, and method for manufacturing same, wherein first source/drain regions of the two vertical MOS transistors are located in an upper region of sidewalls of a trench. A second source/drain region is shared by both MOS transistors and is adjacent at a floor of the trench. Gate electrodes of the MOS transistors that are arranged at the sidewalls of the trench can be individually contacted via parts of a conductive layer that are arranged above the first source/drain regions. In a manufacturing method, such arrangement is made possible by the deposition of a conductive layer of doped polysilicon before the generation of the trench. The area of an MOS transistor can amount to 4F2.
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申请公布号 |
US2002094628(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20020081902 |
申请日期 |
2002.02.22 |
申请人 |
GOEBEL BERND;BERTAGNOLLI EMMERICH |
发明人 |
GOEBEL BERND;BERTAGNOLLI EMMERICH |
分类号 |
H01L21/8238;H01L27/092;(IPC1-7):H01L21/823;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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