发明名称 |
Method for forming cell capacitor for high-integrated DRAMs |
摘要 |
A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by depositing an aluminum oxide layer and a mixed layer of TiON and TiO2 as dielectric layers on a semiconductor substrate having a predetermined lower substructure by an atomic layer deposition (ALD) method and thus forming a double layer structure, and simultaneously providing a high capacitance by using a high dielectric property of a mixed layer of TiON and TiO2.
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申请公布号 |
US2002094624(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010020649 |
申请日期 |
2001.12.12 |
申请人 |
AHN BYOUNG-KWON;PARK SUNG-HUN |
发明人 |
AHN BYOUNG-KWON;PARK SUNG-HUN |
分类号 |
H01L21/8242;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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