| 摘要 |
In one aspect of the present invention, a method and an apparatus are provided for determining a cumulative defect measure for a wafer lot. A wafer lot is selected for inspection. At least one wafer from the lot for inspection is selected. The wafer comprises a plurality of process layers and at least some of the process layers are selected for inspection for defects. The number, type, and kill ratio of the defects on each layer of the wafer selected are determined from inspection. A cumulative defect measurement for the wafer is determined based upon the number, type, and kill ratio of the defects on all inspected layers on the wafer. The cumulative defect measurement for the wafer is extrapolated to determine a quantified indication of a defectiveness of the selected wafer lot.
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