发明名称 METHOD FOR MANUFACTURING VANADIUM OXIDE PHOSPHOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a thin film of vanadium oxide phosphor represented by a composition formula AVO<SB>3</SB>having excellent crystallinity, in a low temperature range from a room temperature to 400°C and forming it directly on an organic substrate which is conventionally difficult, without a binder. SOLUTION: A vanadium oxide phosphor thin film represented by the composition formula AVO<SB>3</SB>is obtained by holding, at 25-450°C, a thin film formed on a substrate and containing A (A is one or more atoms selected out of K, Rb and Cs) and V substantially at an atomic ratio of 1:1 and then irradiating the thin film with ultraviolet laser beams with a wavelength of 400 nm or less to crystallize a vanadium oxide. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009084531(A) 申请公布日期 2009.04.23
申请号 JP20070259862 申请日期 2007.10.03
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 NAKAJIMA TOMOHIKO;TSUCHIYA TETSUO;KUMAGAI TOSHIYA
分类号 C09K11/08;C09K11/00;C09K11/69 主分类号 C09K11/08
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