Embedded memory and methods of forming the same

摘要

An embedded flash memory device includes a gate stack, and source and drain regions in the semiconductor substrate. The first source and drain regions are on opposite sides of the gate stack. The gate stack includes a bottom dielectric layer over the semiconductor substrate, a charge trapping layer over the bottom dielectric layer, a top dielectric layer over the charge trapping layer, a high-k dielectric layer over the top dielectric layer, and a metal gate over the high-k dielectric layer.

主权项

1. A device comprising:
a semiconductor substrate; a flash memory device comprising:
a first gate stack comprising:
a bottom dielectric layer over the semiconductor substrate;a charge trapping layer over the bottom dielectric layer;a top dielectric layer disposed directly on the charge trapping layer;a first high-k dielectric layer over the top dielectric layer; anda first metal gate over the first high-k dielectric layer; anda first source and drain regions in the semiconductor substrate, wherein the first source and drain regions are on opposite sides of the first gate stack; anda transistor comprising:
a second gate stack comprising:a second dielectric layer disposed directly on the semiconductor substrate;a second high-k dielectric layer over the dielectric layer; anda second metal gate over the second high-k dielectric layer; anda second source and drain regions in the semiconductor substrate, wherein the second source and drain regions are on opposite sides of the second gate stack, wherein the first high-k dielectric layer has the same thickness and is formed of the same material as the second high-k dielectric layer; wherein the top dielectric and second dielectric are the same thickness and material.