Front side copper post joint structure for temporary bond in TSV application

摘要

A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon. A dielectric buffer layer is formed over at least a portion of the conductive pad, and an under-bump-metallurgy (UBM) is formed directly coupled to the conductive pad, wherein the UBM extends over at least a portion of the dielectric buffer layer. Thereafter, a conductive pillar is formed over the UBM, and one or more conductive materials are formed over the conductive pillar. The substrate may be attached to a carrier substrate using an adhesive.

主权项

1. A method of forming an integrated circuit structure, the method comprising:
providing a substrate, the substrate having one or more metallization layers thereon and one or more conductive vias extending into the substrate; forming one or more passivation layers over the one or more metallization layers; forming a post-passivation interconnect (PPI) over the one or more passivation layers, the PPI comprising a conductive pad; forming a dielectric buffer layer over at least a portion of the conductive pad; forming an under-bump-metallurgy (UBM) directly coupled to the conductive pad, the UBM extending over at least a portion of the dielectric buffer layer; forming a conductive pillar over the UBM; forming one or more conductive materials over the conductive pillar; and attaching the substrate to a carrier substrate using an adhesive, the adhesive contacting a sidewall of the conductive pillar and extending between the conductive pillar and an adjacent conductive pillar.