| 主权项 |
1. A semiconductor device comprising:
(a) a wiring substrate including a first surface and a bonding finger formed on the first surface; and (b) a semiconductor chip including a main surface, a pad formed on the main surface, a protective insulating film formed on the pad, and a pillar-shaped electrode formed on an opening region of the pad exposed from the protective insulating film, the semiconductor chip being electrically connected to the bonding finger of the wiring substrate via the pillar-shaped electrode, the main surface of the semiconductor chip is opposed to the first surface of the wiring substrate, wherein a probe mark is formed on a probe region of the pad that is covered with the protective insulating film, the pillar-shaped electrode comprises: a first portion formed on the opening region; and a second portion formed on the protective insulating film covering the probe region, wherein, in a plan view, the pillar-shaped electrode is included within the pad, a center position of the opening region is offset from a center position of the pillar-shaped electrode that is opposed to the bonding finger, and the center position of the opening region is offset from a center position of the pad, and wherein, with respect to the center position of the pad in a plan view, the probe mark is disposed on an opposite side of the pad than the center position of the opening region. |
