| 发明名称 | Data storage device and error correction method thereof | ||
| 摘要 | A data storage device including a flash memory and a controller. The controller is configured to perform a first error correction on at least one first data sector of a first page of the flash memory when a predetermined condition is satisfied, obtain a data-sector read voltage of the first data sector through the first error correction, retrieve data of a first meta-data sector of the first page by the data-sector read voltage, and perform a second error correction on the retrieved data of the first meta-data sector read by the data-sector read voltage. | ||
| 申请公布号 | US9405620(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201414562328 | 申请日期 | 2014.12.05 |
| 申请人 | Silicon Motion, Inc. | 发明人 | Chou Po-Sheng |
| 分类号 | G11C29/00;G06F11/10;H03M13/35;H03M13/37;H03M13/11;H03M13/15 | 主分类号 | G11C29/00 |
| 代理机构 | Wang Law Firm, Inc. | 代理人 | Wang Law Firm, Inc. |
| 主权项 | 1. A data storage device, comprising: a flash memory; and a controller, configured to perform a first error correction on at least one first data sector of a first page of the flash memory when a predetermined condition is satisfied, obtain a data-sector read voltage of the first data sector through the first error correction, retrieve data of a first meta-data sector of the first page by the data-sector read voltage, and perform a second error correction on the retrieved data of the first meta-data sector read by the data-sector read voltage. | ||
| 地址 | Jhubei TW | ||