发明名称 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ANALYSIS METHOD
摘要 PROBLEM TO BE SOLVED: To implement stable etching processing by identifying a combination suitable for change control of an etching processing condition from among light emission wavelengths of spectral measurement data, time intervals and changeable items of the etching processing condition.SOLUTION: For each of two or more combinations of the light emission wavelengths of spectral measurement data, time intervals and items of etching processing condition, a regression equation is calculated that indicates a correlation among the light emission wavelength of the spectral measurement data, a light emission intensity in the time interval and an etching result. Further, for each of the combinations, a variation of the regression equation in the case where a setting value of the corresponding item of the etching processing condition is changed, is calculated. Among the combinations, a combination with the smallest variation is identified as a combination of the light emission wavelength, the time interval and a changed item of the etching processing condition to be used for control.SELECTED DRAWING: Figure 1
申请公布号 JP2016143738(A) 申请公布日期 2016.08.08
申请号 JP20150017642 申请日期 2015.01.30
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ASAKURA RYOJI;TAMAOKI KENJI;SHIRAISHI DAISUKE;KAGOSHIMA AKIRA;INOUE TOMOMI
分类号 H01L21/3065;H05H1/00;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址