| 发明名称 | Green-light emitting device including quaternary quantum well on vicinal c-plane | ||
| 摘要 | Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0<x<1, 0<y<1, and 0<z<1. | ||
| 申请公布号 | US9412900(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201514603103 | 申请日期 | 2015.01.22 |
| 申请人 | AICT (Advanced Institutes of Convergence Technology);Samsung Electronics Co., Ltd. | 发明人 | Cho Yong-Hee;Kim Sungjin;Shim Munbo;Pak Yukeun Eugene |
| 分类号 | H01L33/00;H01L33/06;H01L33/32;H01L33/16 | 主分类号 | H01L33/00 |
| 代理机构 | Harnes, Dickey & Pierce, P.L.C. | 代理人 | Harnes, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A light-emitting device comprising: a substrate having a vicinal c-plane surface; a light-emitting layer on the vicinal c-plane surface of the substrate; and wherein the light-emitting layer includes a quantum well layer of AlxInyGal-x-yN and at least one quantum barrier layers of InzGal-zN disposed at either side of the quantum well layer, and wherein 0 <x <1, 0 <y <1, and 0 <z <1, wherein x, y, and z have values for which an internal electric field of the light-emitting device is substantially equal to 0. | ||
| 地址 | Gyeonggi-do KR | ||