Semiconductor body with a buried material layer and method

摘要

One aspect includes a method for forming a buried material layer in a semiconductor body, including providing a semiconductor body having a first side and having a plurality of first trenches extending from the first surface into the semiconductor body. Each of the plurality of first trenches has a bottom and has at least one sidewall and the plurality of first trenches is separated from one another by semiconductor mesa regions. A first material layer is formed on the bottom of each of the plurality of first trenches such that the first material layer leaves at least one segment of at least one sidewall of each of the plurality of trenches uncovered. Each of the plurality of first trenches is filled by epitaxially growing a semiconductor material from the at least one uncovered sidewall segment. After filling the first trenches, second trenches are formed in the mesa regions.

主权项

1. A semiconductor arrangement comprising:
a semiconductor body having a first surface; a buried material layer in the semiconductor body; wherein the buried material layer is arranged distant to the first surface, wherein a monocrystalline semiconductor material is arranged between the material layer and the first surface, wherein a monocrystalline semiconductor material adjoins the buried material layer in a lateral direction of the semiconductor body, and wherein the buried material layer comprises a plurality of first material layers and a plurality of second material layers, wherein the first material layers are arranged alternatingly in a lateral direction of the semiconductor so that each of the plurality of first material layers, in the lateral direction, adjoins two of the plurality of second material layers so that the plurality of first material layers and the plurality of second material layers are contiguous with each other and form the buried material layer, wherein each of the plurality of first layers is arranged on a respective one of a plurality of first surfaces of the semiconductor body and each of the plurality of second layers is arranged on a respective one of a plurality of second surfaces of the semiconductor body, and wherein the plurality of first surfaces are offset relative to the plurality of second surfaces in a vertical direction of the semiconductor body.