发明名称 |
Complementary metal oxide semiconductor device |
摘要 |
The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same. |
申请公布号 |
US9412743(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201414526552 |
申请日期 |
2014.10.29 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lai Chien-Ming;Huang Chien-Chung;Tseng Yu-Ting;Tsai Ya-Huei;Wang Yu-Ping |
分类号 |
H01L27/092;H01L21/28;H01L21/8238;H01L29/49;H01L29/66;H01L29/51;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A complementary metal oxide semiconductor (CMOS) device, comprising:
a PMOS with a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer; and an NMOS with an N type metal gate, which comprises the NWFT layer, the NWFM layer and the metal layer, wherein the P type metal gate and the N type metal gate further comprise a top barrier layer disposed between the NWFM layer and the metal layer, and the NWFM layer is disposed between the NWFT layer and the top barrier layer and has a different material from materials of the NWFT layer and the top barrier layer. |
地址 |
Hsin-Chu TW |