Method and apparatus for power device with depletion structure

摘要

A semiconductor device is provided. The semiconductor device includes a substrate of a first conductivity type and an epitaxial structure of the first conductivity type disposed on the substrate. The semiconductor device further includes a well region having a first doping concentration of a second conductivity type disposed in the epitaxial structure and the substrate. The semiconductor device further includes a drain region and a source region respectively formed in the epitaxial structure inside and outside of the well region. The semiconductor device further includes a body region of the first conductivity type disposed under the source region, and a pair of first and second doped regions disposed in the well region between the drain region and the source region. The first and second doped regions extend outside of the well region and toward the body region.

主权项

1. A semiconductor device comprising:
a substrate having a first conductivity type; a drain region, a source region, and a well region disposed in the substrate, the well region being disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type; a body region having the first conductivity type and disposed under the source region; first and second doped regions disposed within the well region, the first doped region having the first conductivity type, and the second doped region being stacked on the first doped region and having the second conductivity type; and third and fourth doped regions disposed to overlap a portion of the body region and a portion of the substrate between the body region and the well region, the third doped region having the first conductivity type, and the fourth doped region being stacked on the first doped region and having the second conductivity type, the third and fourth doped regions being separated from the first and second doped regions.