Programming methods and memories

摘要

Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first portion of programming, and an increasing but reduced channel voltage for a second portion of programming.

主权项

1. A method of programming a memory, comprising:
boosting a channel voltage while applying a first portion of a plurality of programming pulses to a selected access line until a first voltage level of the channel voltage occurs when a final program pulse of the first portion of the plurality of programming pulses is applied; and when a criteria is met, boosting the channel voltage while applying a second portion of the plurality of programming pulses to the selected access line, starting from a second voltage level of the channel voltage that occurs when an initial program pulse of the second portion of the plurality of programming pulses is applied; wherein the second voltage level of the channel voltage that occurs when the initial program pulse of the second portion of the plurality of programming pulses is applied is less than the first voltage level of the channel voltage that occurs when the final program pulse of the first portion of the plurality of programming pulses is applied.